IEDM have issued a taster/teaser of their 2015 technical program along with session details. NVM enthusiasts will be interested in Session 10 on R(e)RAM and Session 3 which features PCRAM and Flash. Session 3….
Tag Archive: Samsung
February always features two conferences important to the Semiconductor Manufacturing World: The SPIE Advanced Lithography Conference and ISSCC, EUV Lithography featured prominently at the former and an update on Samsung’s 3D-NAND was presented at the latter.
Samsung were well ahead of their competitors in the mass memory market when they announced the volume manufacturing of 3D-NAND (VNAND) chips. Some excellent descriptions of this technology notably by Andy Walker of Schilitron Inc have appeared here on the Forum and elsewhere. Initially, there was a certain amount of skepticism….
from Andy Walker, Founder and President of Schiltron Corporation The concepts of 3D NAND and V-NAND have received so much publicity since last August that no-one should be faulted for thinking that we are on the verge of a sea-change in how high density Flash memory will be manufactured for many years to come.
From Nicolas Baron, Co-founder and CEO, KnowMade, France. The integration limit of flash memories is approaching, and emerging Non-Volatile Memories (eNVM) to replace conventional Flash Memories have been proposed.
While talking to David Eggleston, Principal, Intuitive Cognition Consulting* about the future of ReRAM/CBRAM, he pointed me to an interesting session at the latest Flash Memory Summit on ‘Flash below 20nm’. In the session, Applied Materials, SK hynix, Micron and SanDisk
The International Memory Workshop (IMW 2013) takes place this week in Monterey CA*. This is 5th IMW although the conference can trace its roots through the Non-Volatile Semiconductor Memory Workshops back to 1976. Spread over three days, the conference has some 53 presentations