The filamentary mechanism for ReRAM/CBRAM operation has been widely discussed here and elsewhere and is becoming the ‘accepted wisdom’ for a well defined set of active materials and electrodes. Broadly speaking, these devices can be characterized
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Tags: 4DS, Correlated Electron Materials, NCCAVS, PCMO, Symetyrix
NCCAVS Thin Film Users Group Advanced Memory Meeting Tuesday, Nov 12, 2013
Tags: 4DS, Adesto, Micron, NCCAVS, SanDisk, Stanford
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