Tag Archive: 4DS

Jan 14

Correlated Electron Systems

The filamentary mechanism for ReRAM/CBRAM operation has been widely discussed here and elsewhere and is becoming the ‘accepted wisdom’ for a well defined set of active materials and electrodes. Broadly speaking, these devices can be characterized

Continue reading »

Nov 07

NCCAVS Advanced Memory Meeting: Full Program

NCCAVS Thin Film Users Group Advanced Memory Meeting Tuesday, Nov 12, 2013

Continue reading »