Category Archive: Applications

Jan 28

3D Xpoint, the other shoe drops (maybe)

At last week’s Semi conference in Half Moon Bay in California, Guy Blalock Co-CEO of IM Flash Technologies (the Intel/Micron memory joint-venture, Blalock is the Micron half of the CEO duo), in what appears to be, frankly, a rather extraordinary talk, let out a few more…

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Sep 18

The Way Forward

Developing any new technology is expensive, revolutionary technologies even more so. It is expensive to introduce new methods, materials and production techniques etc.. It is not enough just to perfect all these but one has to show the markets a compelling reason (price, performance)…..

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Feb 10

Forecasting and Filaments

A couple of items have come my way recently. First Yole have just released a new technology and market analysis dedicated to the Emerging Non Volatile Memory. Second a paper entitled ‘Evolution of conductive filament and ….’ by a group from the…, Chinese Academy of Sciences in Beijing has just appeared in Nature’s online scientific reports.

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May 14

Embedded NVM for IoT will lead the way with standalone memory to follow


from Lucian Shifren, Principal Engineer, ARM Inc. While many options exist to extend the roadmap for standalone FLASH (such as vertical FLASH), embedded FLASH has a much shorter runway. While standalone FLASH can be optimized for memory function, embedded FLASH needs

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Apr 29

An Interview with Andy Walker

Andy Walker is Founder and President of Schiltron Corporation, Mountain View, California. Please tell us a little about Schiltron Corporation? Schiltron Corporation is a Silicon Valley startup funded to investigate options for 3D

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Feb 24

ISSCC 2014

Highlights from this year’s ISSCC conference included more details of the Sony/Micron 16Gb ReRAM chip and Samsung’s 3D NAND (V-NAND) chip both of which have featured in recent Forum blogs. The Sony/Micron chip is more accurately described as

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Dec 12

IEDM Highlight: High-Temperature Data Retention in CBRAM

In a paper presented at the 2013 International Electron Devices Meeting in Washington, D.C. on Wednesday, December 11, 2013, Adesto Technologies described the high-temperature data retention characteristics

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Oct 16

Rad Hard Revisited

rad hard2

Back in March, I described the work of an Argentinean group pursuing ReRAM technology for Rad Hard applications. While the premise seemed reasonable, I was a somewhat unconvinced due to the lack of any data. Today, that has changed as Adesto Technologies

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Sep 25

Adesto ship billionth DataFlash product


ReRAM-Forum Blog sponsor Adesto Technologies have reached a major milestone with the shipment of its one billionth DataFlash product!

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Sep 17


David Eggleston, Principal, Intuitive Cognition Consulting*, organized a couple of ‘new technologies’ sessions at last month’s Flash Memory Summit (FMS) in Santa Clara, CA. One of the sessions was devoted to ReRAM

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Aug 21

Neuromorphic Computing

Boise State 1

First a caveat: I know something (from a previous life) about neuromorphic computing but what I do know is not much and no doubt outdated at least in part! The concept as I understand it is to mimic in silicon the methods of computation as performed in biological entities.

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May 08

Adesto’s Workshop, CBRAM Products and Roadmap

Adesto Technologies held a get acquainted workshop recently in San Jose and David Viera, MarCom Director, was kind enough to forward me the presentation focused on CBRAM. The program started with a company introduction followed by

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Mar 27

Rad Hard?


A group in Argentina is studying ReRAM for use in harsh environments such as space and satellites based on the premise that the technology will have superior radiation hardness to conventional non-volatile memory, i.e. it inherently “Rad Hard”.

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Mar 21

Predicting the ReRAM Roadmap

Overviews and forecasts of the semiconductor markets can provide a reality check on the more ‘controversial’ statements made about product roadmaps. Usually these are based on an optimistic view of technology readiness rather than the cold reality of market opportunity. I know, because I have made them myself! Recently a couple of substantial reports have …

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Jan 23


There has been lots of talk recently about IBM’s two terminal access device (AD) developed for PCRAM and ReRAM based on MIEC (Mixed Electronic Ionic Conduction). With a highly non-linear IV characteristic (far more non-linear than a pn diode for example), it has been attracting a lot of attention for BEOL memory. It appears to …

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