In a paper presented at the 2013 International Electron Devices Meeting in Washington, D.C. on Wednesday, December 11, 2013, Adesto Technologies described the high-temperature data retention characteristics of its proprietary resistive random-access memory technology known as CBRAM The presentation demonstrated the ability of non-volatile CBRAM memory cells to preserve stored data at 200°C for more than 800 hours. Data retention and device operation at 200°C are necessary for automotive and industrial applications, as well as a manufacturing requirement for devices containing boot code or other data exposed to solder reflow. The paper examines the challenges high-temperature represents to non-volatile resistive memories and shows how Adesto Technologies’ CBRAM technology overcomes these challenges while preserving the speed, low-voltage and ultra-low power characteristics inherent to the technology.
“The immunity of CBRAM memory cells to extremely high temperatures is a critical next-step in the commercialization of CBRAM technology,” said Ishai Naveh, VP of Marketing at Adesto. “This capability opens the door to new applications for both our discrete and embedded products. We continue to validate the unique strengths of the technology and to explore new areas to expand its use.”
“Recently, we demonstrated the ultra-low power capability of CBRAM by showcasing a body-area sensor chip that operates at sub 0.8V and uses an embedded CBRAM memory module,” said Naveh. “Notably, these capabilities demonstrated by Adesto are not just based on a few working cells but rather repeatable and manufacturable results on yielding megabit arrays and actual products. Over the last several years, Adesto has amassed significant know-how on the practical commercialization of this emerging resistive RAM technology on actual products.”
Adesto recently announced its CBRAM memory also demonstrates tolerance to gamma irradiation. The capability allows the memory products to be incorporated in applications requiring sterile components.
Full press release can be found here
Christie Marrian, ReRAM-Forum, Moderator