Monthly Archive: December 2013

Dec 12

IEDM Highlight: High-Temperature Data Retention in CBRAM

In a paper presented at the 2013 International Electron Devices Meeting in Washington, D.C. on Wednesday, December 11, 2013, Adesto Technologies described the high-temperature data retention characteristics

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Dec 09

Samsung Analyst Day

Samsung held an Analyst Day at the beginning of November which I missed at the time. In my defence, I don’t normally keep an eye out for such presentations from Samsung as the previous one was 5 years ago!

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