Monthly Archive: March 2013

Mar 27

Rad Hard?


A group in Argentina is studying ReRAM for use in harsh environments such as space and satellites based on the premise that the technology will have superior radiation hardness to conventional non-volatile memory, i.e. it inherently “Rad Hard”.

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Mar 21

Predicting the ReRAM Roadmap

Overviews and forecasts of the semiconductor markets can provide a reality check on the more ‘controversial’ statements made about product roadmaps. Usually these are based on an optimistic view of technology readiness rather than the cold reality of market opportunity. I know, because I have made them myself! Recently a couple of substantial reports have …

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Mar 14


While doing due diligence on the recent ISSCC posts, I came across mention of Toshiba/SanDisk’s development partner, Intermolecular (IM), based in San Jose, CA. (It just so happens that several former colleagues are currently working at IM as the Silicon Valley job cycle takes another turn). As I mentioned in a Blog on the Stanford …

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Mar 10

ReRAM Video from Panasonic


English, no soundtrack Japanese with soundtrack Link to Panasonic ReRAM MCU webpage Christie Marrian, Moderator Many thanks to Joseph Kucera for alerting me to this!

Mar 08

(Update?) Opportunity: Memory Architect – Flash, Non-Volatile, CBRAM – Paris, France


Possibly the same position as posted on January 28th but with more details and a different recruiter. Recruiter: European Recruitment Ltd Posted: 07 March 2013 Ref: CCMAR01 Contact: Christopher Canneaux Location: Paris Job Function: Research & Development

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Mar 05

ISSCC 2013 Revisited


It’s already being referred to as simply “Paper 12.1” from this year’s 60th edition of the ISSCC in San Francisco. Paper 12.1 is of course the Toshiba/SanDisk paper describing a bilayer 32Gbit ReRAM chip. Unfortunately I was not at the conference. A few details of the paper have emerged and some colleagues have been kind …

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