We are starting this Blog as a home for articles and discussion related to memory technology based primarily on resistive change (commonly known as RRAM or ReRAM) and conductive bridge (commonly referred to as CBRAM). We are open to anyone actively interested or working in the field. It is timely as RRAM/CBRAM are rapidly gaining traction both as viable technologies in their own right as well as solutions for the scaling limitations of conventional flash memory. We envisage that we will have both technology push and application pull entries and aim that the Blog will become the first ‘port of call’ for potential users as well as those following the latest developments in this exciting field.
If you are interested in submitting a Blog entry please consider the following guidelines. Entries should not be too long (i.e. ~400 words) and should be easy to read with some eye catching figures, animations or illustrations. For longer articles, such as a technology overview, we recommend splitting into more than one Blog entry. We also hope to see synopses of published papers where the actual paper can be referenced for more complete details. Broadly speaking we expect that Blog entries will fall into one of the following categories.
- RRAM/CBRAM Technology Overviews
- New System Architectures
- Technology Updates
- News Items
- Market Analysis and Forecasts
- Product Announcements and News
- Application ‘Pull’ describing applications where RRAM/CBRAM technologies are well suited
Other issues of interest to the RRAM/CBRAM community
The RRAM/CBRAM Blog is a moderated Blog in order to ensure that it maintains focus. We also encourage comments which will also be moderated. The Blog is being started with sponsorship from Adesto Technologies, www.adestotech.com, well known pioneers of CBRAM. Adesto have contracted an independent moderator who is an expert in the field but has no other ties to Adesto.
Christie Marrian, WWW.ReRAM-Forum.com Moderator