A couple of items have come my way recently. First Yole have just released a new technology and market analysis dedicated to the Emerging Non Volatile Memory. Second a paper entitled ‘Evolution of conductive filament and ….’ by a group from the…, Chinese Academy of Sciences in Beijing has just appeared in Nature’s online scientific reports.
It’s that time of year again! However, this year a little differently…. Why? Well on revisiting last year’s edition of this post, I was struck how the only successful ‘predictions’ were of the negative variety (suggestion that something that wouldn’t happen) whereas most of those that were ‘positive’ (suggested something that would happen) were wide of the mark.
Samsung were well ahead of their competitors in the mass memory market when they announced the volume manufacturing of 3D-NAND (VNAND) chips. Some excellent descriptions of this technology notably by Andy Walker of Schilitron Inc have appeared here on the Forum and elsewhere. Initially, there was a certain amount of skepticism….
It’s IEDM week and from my position on the other side of the Pond (i.e. I’m not at the conference), it’s clear that interest in ReRAM and CBRAM continues. However, this year there are more papers focussing on the access device suitable for use in next generation memory. This actually makes a lot of sense because…..
Update At Intermolecular’s Q1 2014 conference call. more details emerged about IMI’s semiconductor related activity. Q1 was obviously tough as CDP’s with ATMI and Global Foundries as well as SanDisk/Toshiba ended and precipitated an 18% head count reduction. Ouch…. The Micron program, however continues and with Dave Lazovsky, IMI President and CEO stating “Micron’s first …
Memory Cell with Threshold Switch (US8642985) by Frederick T. Chen. A high-density resistive memory traditionally coupled a transistor and a switching resistance in the same cell. While the functionality was easy to predict with this configuration, the density is often compromised by the need to make the transistor large enough