I’ve mentioned TechInsights in previous articles on the Forum. They provide a literally ‘unique’ service in providing a view of the insides of chips revealing much about the dimensions, materials and structure of the various components. Memory chips are no exception and their latest reports are of particular interest to the ReRAM community as
February always features two conferences important to the Semiconductor Manufacturing World: The SPIE Advanced Lithography Conference and ISSCC, EUV Lithography featured prominently at the former and an update on Samsung’s 3D-NAND was presented at the latter.
A couple of items have come my way recently. First Yole have just released a new technology and market analysis dedicated to the Emerging Non Volatile Memory. Second a paper entitled ‘Evolution of conductive filament and ….’ by a group from the…, Chinese Academy of Sciences in Beijing has just appeared in Nature’s online scientific reports.
It’s that time of year again! However, this year a little differently…. Why? Well on revisiting last year’s edition of this post, I was struck how the only successful ‘predictions’ were of the negative variety (suggestion that something that wouldn’t happen) whereas most of those that were ‘positive’ (suggested something that would happen) were wide of the mark.
Samsung were well ahead of their competitors in the mass memory market when they announced the volume manufacturing of 3D-NAND (VNAND) chips. Some excellent descriptions of this technology notably by Andy Walker of Schilitron Inc have appeared here on the Forum and elsewhere. Initially, there was a certain amount of skepticism….
It’s IEDM week and from my position on the other side of the Pond (i.e. I’m not at the conference), it’s clear that interest in ReRAM and CBRAM continues. However, this year there are more papers focussing on the access device suitable for use in next generation memory. This actually makes a lot of sense because…..