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Patent Alert

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Memory Cell with Threshold Switch (US8642985) by Frederick T. Chen. A high-density resistive memory traditionally coupled a transistor and a switching resistance in the same cell. While the functionality was easy to predict with this configuration, the density is often compromised by the …

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ReRAM at SPIE

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Following on from the last post on ReRAM related news from the SPIE Advanced Lithography Conference in February, some words on a panel session on ‘Alternative Forms of Scaling’ covering the various 3D approaches to scaling.

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Meetings of Interest to the ReRAM/CBRAM Community

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Latest Update: Leti Memory Workshop, 6/24/2014, 2014 VLSI & IMW 2014 dates and location, ISSCC 2015 dates,

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SPIE Advanced Lithography Conference

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The SPIE Litho conference every February is one of the things I really miss being located this side of the Pond. I used to attend regularly starting when it was held at the San Jose Fairmont. I was involved in running one of …

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Vertical Channel 3D NAND – An Optical Illusion?

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from Andy Walker, Founder and President of Schiltron Corporation The concepts of 3D NAND and V-NAND have received so much publicity since last August that no-one should be faulted for thinking that we are on the verge of a sea-change in how high …

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News Update: Intermolecular, Nanoimprint and Adesto

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Several news stories of interest to the ReRAM/CBRAM community have appeared in the last week or two. Intermolecular (IM) are an innovative company with a proprietary High Productivity Combinatorial (HPC) technology which allows them and their partners to rapidly screen materials in critical …

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Discover our new Patent Landscape on Emerging Non-Volatile Memories

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From Nicolas Baron, Co-founder and CEO, KnowMade, France. The integration limit of flash memories is approaching, and emerging Non-Volatile Memories (eNVM) to replace conventional Flash Memories have been proposed.

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ISSCC 2014

Sony Cell

Highlights from this year’s ISSCC conference included more details of the Sony/Micron 16Gb ReRAM chip and Samsung’s 3D NAND (V-NAND) chip both of which have featured in recent Forum blogs. The Sony/Micron chip is more accurately described as

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Comments

Comments

Comments on Blog posts are extremely welcome at ReRAM-Forum but if you find that you are unable to leave a comment, please submit it via the ‘CONTACT THE MODERATOR’ link including the title of the Post.

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Update on CeRAM and Acronyms

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Following last month’s post here on CeRAM being developed by Symetrix Corporation, various stories have appeared indicating that ARM

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Crystal Ball Gazing

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It’s that time of year again… Time to dust off that ol’ crystal ball and gaze into the murky depths and come up with the ReRAM-Forum predictions for the rest of 2014!

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Correlated Electron Systems

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The filamentary mechanism for ReRAM/CBRAM operation has been widely discussed here and elsewhere and is becoming the ‘accepted wisdom’ for a well defined set of active materials and electrodes. Broadly speaking, these devices can be characterized

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IEDM Highlight: High-Temperature Data Retention in CBRAM

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In a paper presented at the 2013 International Electron Devices Meeting in Washington, D.C. on Wednesday, December 11, 2013, Adesto Technologies described the high-temperature data retention characteristics

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Samsung Analyst Day

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Samsung held an Analyst Day at the beginning of November which I missed at the time. In my defence, I don’t normally keep an eye out for such presentations from Samsung as the previous one was 5 years ago!

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NCCAVS Advanced Memory Meeting: Full Program

NCCAVS Thin Film Users Group Advanced Memory Meeting Tuesday, Nov 12, 2013

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