It’s IEDM week and from my position on the other side of the Pond (i.e. I’m not at the conference), it’s clear that interest in ReRAM and CBRAM continues. However, this year there are more papers focussing on the access device suitable for use in next generation memory. This actually makes a lot of sense because:
Update At Intermolecular’s Q1 2014 conference call. more details emerged about IMI’s semiconductor related activity. Q1 was obviously tough as CDP’s with ATMI and Global Foundries as well as SanDisk/Toshiba ended and precipitated an 18% head count reduction. Ouch…. The Micron program, however continues and with Dave Lazovsky, IMI President and CEO stating “Micron’s first …
Memory Cell with Threshold Switch (US8642985) by Frederick T. Chen. A high-density resistive memory traditionally coupled a transistor and a switching resistance in the same cell. While the functionality was easy to predict with this configuration, the density is often compromised by the need to make the transistor large enough
Following on from the last post on ReRAM related news from the SPIE Advanced Lithography Conference in February, some words on a panel session on ‘Alternative Forms of Scaling’ covering the various 3D approaches to scaling.
The SPIE Litho conference every February is one of the things I really miss being located this side of the Pond. I used to attend regularly starting when it was held at the San Jose Fairmont. I was involved in running one of the sub conferences and participated in various sessions and panels. The great …
from Andy Walker, Founder and President of Schiltron Corporation The concepts of 3D NAND and V-NAND have received so much publicity since last August that no-one should be faulted for thinking that we are on the verge of a sea-change in how high density Flash memory will be manufactured for many years to come.
From Nicolas Baron, Co-founder and CEO, KnowMade, France. The integration limit of flash memories is approaching, and emerging Non-Volatile Memories (eNVM) to replace conventional Flash Memories have been proposed.